Creation of thin films on the surface of InP with a controlled gas-sensitive signal under the influence of PbO + Y2O3 compositions

Thin-film objects with a reproducible temperature dependence of the resistance, thermally stable, and easy to obtain can be used as sensitive elements in semiconductor gas sensors. The aim this study was create thin films on InP surface under influence an oxide chemostimulator + inert component (PbO Y2O3, respectively) compositions determine their gas-sensitive properties formula composition.Thin were synthesised by method chemically stimulated thermal oxidation various PbO Y2O3 compositions. thickness formed films, elemental chemical composition determined (by laser ellipsometry, X-ray phase analysis, infra-red spectroscopy). A number experiments carried out establish obtained respect ammonia concentrations 120, 100, 80 ppm.By oxidation, we surface. It that samples had n-type conductivity. response detected presence atmosphere. ability predetermined value sensory demonstrated